Samsung Electronics has announced its first 30nm-class DRAM memory has just successfully completed customer evaluations, in 2Gb densities. With DDR3 SDRAM becoming the predominant memory standard, Samsung claimed its aggressive advancement in process technology will raise productivity and expedite dissemination of high performance, 1.5V and 1.35V DDR3 for servers, desktops and notebooks.

The 30nm-class process when applied to DDR3 mass production raises productivity by 60% over 40nm-class DDR3, according to Samsung. This will result in a doubling of production cost-efficiency compared to DRAM produced using 50nm- to 60nm-class technology.

Samsung said 30nm-class 2Gb DDR3 reduces power consumption by up to 30% over 50nm-class DRAM. A 4GB 30nm module when used in a new-generation notebook will consume only 3W per hour, which is just 3% of the total power usage of a notebook, Samsung said.

Samsung is scheduled to kick off mass production of 30nm-class DDR3 in the second half of 2010.